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FPD750DFN Datasheet, Filtronic Compound Semiconductors

FPD750DFN phemt equivalent, low noise high linearity packaged phemt.

FPD750DFN Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 610.11KB)

FPD750DFN Datasheet
FPD750DFN Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 610.11KB)

FPD750DFN Datasheet

Features and benefits

(1850MHZ):
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* 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added .

Application


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* Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNA.

Description

The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offse.

Image gallery

FPD750DFN Page 1 FPD750DFN Page 2 FPD750DFN Page 3

TAGS

FPD750DFN
LOW
NOISE
HIGH
LINEARITY
PACKAGED
PHEMT
Filtronic Compound Semiconductors

Manufacturer


Filtronic Compound Semiconductors

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